Non-Planar Semiconductor Devices having Multi-Layered Compliant Substrates

摘要

Non-planar semiconductor devices having multi-layered compliant substrates and methods of fabricating such non-planar semiconductor devices are described. For example, a semiconductor device includes a semiconductor fin disposed above a semiconductor substrate. The semiconductor fin has a lower portion composed of a first semiconductor material with a first lattice constant (L1), and has an upper portion composed of a second semiconductor material with a second lattice constant (L2). A cladding layer is disposed on the upper portion, but not on the lower portion, of the semiconductor fin. The cladding layer is composed of a third semiconductor material with a third lattice constant (L3), wherein L3>L2>L1. A gate stack is disposed on a channel region of the cladding layer. Source/drain regions are disposed on either side of the channel region.

主权项

1. A semiconductor device, comprising:
a semiconductor fin disposed above a semiconductor substrate, the semiconductor fin having a lower portion comprising a first semiconductor material with a first lattice constant (L1) and having an upper portion comprising a second semiconductor material with a second lattice constant (L2); a cladding layer disposed on the upper portion, but not on the lower portion, of the semiconductor fin, the cladding layer comprising a third semiconductor material with a third lattice constant (L3), wherein L3>L2>L1; a gate stack disposed on a channel region of the cladding layer; and source/drain regions disposed on either side of the channel region.