| 摘要 |
PROBLEM TO BE SOLVED: To efficiently suppress the generation of thermal runaway with a relatively simple circuit configuration and to improve an output power characteristic and a distortion characteristic in a semiconductor circuit constructed by parallelly connecting many bipolar transistors, especially HBTs. SOLUTION: This semiconductor circuit is constructed by parallelly connecting a plurality of HBTs 1, 2, 3, 4..., and a temperature monitor element 5 is respectively arranged in the vicinity of the respective HBTs. The element 5 has quality in which a current feeding capability increases in accordance with a temperature rise, its input terminal is connected to a bias line 6, its output terminal is also connected to the base electrode of an HTB adjoining a HTB located in the vicinity of its corresponding temperature monitor element 5, and the HBTs 1 to 4 are thermally connected to the respective neighboring temperature monitor elements 5.
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