| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a Schottky barrier diode whose barrier height can be easily regulated and hardly changed even in an after-soldering process. <P>SOLUTION: The method of manufacturing the Schottky barrier diode comprises processes such as a silicon base preparing process of preparing an n<SP>+</SP>-silicon base formed with an n<SP>-</SP>-layer on its one surface, an insulating film forming process of forming an insulating film with an opening on the one surface of the silicon base, a platinum film forming process of forming a platinum film on the opening of the insulating film, a silicide layer forming process of forming a platinum silicide layer by thermally treating the silicon base, a molybdenum film forming process of forming a molybdenum film above the silicide layer without carrying out a platinum removing process, and a silicide layer modifying process of making the silicide layer contain molybdenum by subjecting the silicon base to a thermal treatment in this sequence. <P>COPYRIGHT: (C)2007,JPO&INPIT |
