| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain emission characteristics corresponding to In composition while suppressing decomposition of crystal structure, relating to a quantum well structure comprising a group III nitride semiconductor having In in composition. <P>SOLUTION: The method for manufacturing a quantum well structure includes a well layer growth step in which an InGaN well layer 5a is grown while the temperature of a sapphire substrate 15 is kept at a first value, an intermediate layer growth step in which a GaN intermediate layer 5c is grown on the well layer 5a while the temperature of the substrate 15 is gradually raised from the first value, and a barrier wall layer growth step in which a GaN barrier layer 5b is grown on the intermediate later 5c while the temperature of the substrate 15 is kept at a second value which is higher than the first one. In the intermediate layer growth step, the intermediate layer 5c is grown up to the value thicker than 1 [nm] but thinner than 3 [nm]. <P>COPYRIGHT: (C)2010,JPO&INPIT |
