NONVOLATILE RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A nonvolatile resistive memory, comprising an inert metal electrode (12), a resistive functional layer (14), and an easily oxidizable metal electrode (15), and characterized in that: inserted between the inert metal electrode (12) and the resistive functional layer (14) is a graphene barrier layer (13) that is capable of stopping easily oxidizable metal ions from migrating into the inert metal electrode (12) via the resistive functional layer (14) under the effects of an electric field during a device programming process. The nonvolatile resistive memory device and the manufacturing method therefor have one or more layers of graphene thin films servings as a metal ion barrier layer added between the inert electrode and the solid-state electrolyte resistive functional layer to stop electrically-conductive metal filaments formed in the resistive layer from spreading into the inert electrode layer during a RRAM device programming process, thus eliminating occurrence of the phenomenon of erroneous programming during a device erase process, and increasing the reliability of the device.