Replacement fin process in SSOI wafer

摘要

A method of forming replacement fins in a complimentary-metal-oxide-semiconductor (CMOS) device that includes a p-type field effect transistor device (pFET) and an n-type field effect transistor device (nFET) and a CMOS device are described. The method includes forming strained silicon (Si) fins from a strained silicon-on-insulator (SSOI) layer in both an nFET region and a pFET region, forming insulating layers over the strained Si fins, and forming trenches within the insulating layers to expose the strained Si fins in the pFET region only. The method also includes etching the strained Si fins in the pFET region to expose a buried oxide (BOX) layer of the SSOI layer, etching the exposed portions of the BOX layer to expose a bulk substrate, epitaxially growing a Si portion of pFET replacement fins from the bulk substrate, and epitaxially growing silicon germanium (SiGe) portions of the pFET replacement fins on the Si portion of the pFET replacement fins.

主权项

1. A method of forming replacement fins in a complimentary-metal-oxide-semiconductor (CMOS) device that includes a p-type field effect transistor device (pFET) and an n-type field effect transistor device (nFET), the method comprising:
forming strained silicon (Si) fins from a strained silicon-on-insulator (SSOI) layer in both an nFET region and a pFET region; forming one or more insulating layers over the strained Si fins; forming trenches within the one or more insulating layers so as to expose the strained Si fins in the pFET region only; etching the strained Si fins in the pFET region to expose a buried oxide (BOX) layer of the SSOI layer; etching the exposed portions of the BOX layer to expose a bulk substrate; epitaxially growing a Si portion of pFET replacement fins from the bulk substrate; and epitaxially growing silicon germanium (SiGe) portions of the pFET replacement fins on the Si portion of the pFET replacement fins.