发明名称 |
Method of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrode |
摘要 |
A capacitor incorporated in a semiconductor integrated circuit device is expected to have a large amount of capacitance without increase of the occupation area, and has a lower electrode increased in surface area by using a roughening technique selected from the group consisting of an anodizing technique, an anodic oxidation, a wet etching and a dry etching so that a surface of the lower electrode becomes porous, thereby increasing the capacitance.
|
申请公布号 |
US5372962(A) |
申请公布日期 |
1994.12.13 |
申请号 |
US19930011855 |
申请日期 |
1993.02.01 |
申请人 |
NEC CORPORATION |
发明人 |
HIROTA, TOSHIYUKI;HONMA, ICHIROU;WATANABE, HIROHITO;ZENKE, MASANOBU |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|