Semiconductor memory device using one common address bus line between address buffers and column predecoder

摘要

A semiconductor memory device, includes: an external address buffer for buffering a first address signal to generate a buffered address signal; a delay for delaying the buffered address signal for a predetermined time to generate a delayed address signal; an internal address buffer for buffering the buffered address signal and the delayed address signal to generate a second address signal; a common address bus line; a switching unit responsive to a control signal for selectively coupling one of the buffered address signal, the delayed address signal and the second address signal as a selected address signal to said common address bus line; and a column predecoder for predecoding the selected address signal transferred via said common address bus line.