Optical sensor used as a photo diode or photo transistor comprises a substrate, an intermediate metal dielectric and a first antireflection layer arranged on the substrate, and a passivating layer arranged on the dielectric

摘要

Optical sensor comprises a substrate (1); an intermediate metal dielectric (2) and a first antireflection layer (3) arranged on the substrate; and a passivating layer (7) arranged on the dielectric. Preferred Features: A photo diode is arranged in the substrate. The dielectric is made from silicon oxide doped with arsenic, phosphorus and/or boron. The antireflection layer is arranged between the substrate and the dielectric. A second antireflection layer (6) is arranged between the dielectric and the passivating layer.