| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high performance random number generation device sufficiently generating random numbers of satisfactory quality. <P>SOLUTION: The random number generation device is provided with: a source region 16a; a drain region 16b; a channel region 11 arranged between the source region and the drain region; and an insulated part arranged on the channel region, the insulated part including a trap insulated film 13 equipped with a trap based on dangling bond, and expressed by Si<SB>x</SB>(SiO<SB>2</SB>)<SB>y</SB>(Si<SB>3</SB>N<SB>4</SB>)<SB>1-y</SB>M<SB>z</SB>(M is an element other than Si, O and N, x≥0, 1≥y≥0, z≥0 excluding the case that x=0, y=1 and z=0). This random number generation device is further provided with a semiconductor element in which the conductivity of the channel region fluctuates at random according to the quantity of charge captured by the trap and a random generation part connected to the semiconductor element for generating random numbers based on the random fluctuation of the conductivity of the channel region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
