发明名称 |
Germanium infrared sensor for CMOS imagers |
摘要 |
A method of fabricating a germanium infrared sensor for a CMOS imager includes preparation a donor wafer, including: ion implantation into a silicon wafer to form a P+ silicon layer; growing an epitaxial germanium layer on the P+ silicon layer, forming a silicon-germanium interface; cyclic annealing; and implanting hydrogen ions to a depth at least as deep as the P+ silicon layer to form a defect layer; preparing a handling wafer, including: fabricating a CMOS integrated circuit on a silicon substrate; depositing a layer of refractory metal; treating the surfaces of the donor wafer and the handling wafer for bonding; bonding the handling wafer and the donor wafer to form a bonded structure; splitting the bonded structure along the defect layer; depositing a layer of indium tin oxide on the germanium layer; completing the IR sensor.
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申请公布号 |
US2006194415(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
US20050069422 |
申请日期 |
2005.02.28 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LEE JONG-JAN;MAA JER-SHEN;HSU SHENG T.;TWEET DOUGLAS J. |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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