| 摘要 |
PROBLEM TO BE SOLVED: To realize a stable seal ring structure by preventing occurrence of particles due to an etching residue in a semiconductor device, and also to provide its manufacturing method. SOLUTION: The semiconductor device consists of an interior element region of chip where elements are arranged on a semiconductor substrate; and a peripheral region of chip which consists of an annular seal ring 2 formed on the semiconductor substrate so as to surround the interior element region of chip. The seal ring 2 consists of an annular metal wall 14(b) formed by embedding an annular groove with metal; an annular silicon nitride film 15(b) which, is wider than the metal wall 14(b), and covers the top face of the metal wall; and an annular metal pad layer 16(b) which covers the top face of the silicon nitride film. COPYRIGHT: (C)2007,JPO&INPIT
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