| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode for a phase change memory, the method of forming the electrode, and the phase change memory. SOLUTION: An electrode 100 for a memory material for the phase change memory comprises: a first layer 110 joined on a memory material 102 containing nitride (AN<SB>x</SB>), where A is one of Ti and W and x is smaller than 1.0; and a second layer 114 joined on the first layer 110 containing nitride (AN<SB>y</SB>), where y is equal to or larger than 1.0. The first layer 110 of this multi-layer electrode is joined on a chalcogenide based memory material 102 such as GST stronger than stochiometric TiN or WN. As a result, interlaminar peeling is prevented. A substrate 116 has a diode 120 internally, such as a diode (lower) electrode 118 for connecting a PNP diode to the (lower) surface 122 of the memory material 102. COPYRIGHT: (C)2007,JPO&INPIT |
