METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES

摘要

A method of forming a semiconductor device can include forming an insulation layer using a material having a composition selected to provide resistance to subsequent etching process. The composition of the material can be changed to reduce the resistance of the material to the subsequent etching process at a predetermined level in the insulation layer. The subsequent etching process can be performed on the insulation layer to remove an upper portion of the insulation layer above the predetermined level and leave a lower portion of the insulation layer below the predetermined level between adjacent conductive patterns extending through the lower portion of the insulation layer. A low-k dielectric material can be formed on the lower portion of the insulation layer between the adjacent conductive patterns to replace the upper portion of the insulation layer above the predetermined level.

主权项

1. A method of manufacturing a semiconductor device including a conductive structure, comprising:
forming a sacrificial layer including an inorganic insulative material on a lower contact by an in-situ deposition process, the sacrificial layer having a composition at a lower portion and a different composition at an upper portion thereof; forming a conductive pattern extending through the sacrificial layer to electrically connect to the lower contact; removing the upper portion of the sacrificial layer such that the conductive pattern is exposed by the lower portion of the sacrificial layer; and forming an insulating interlayer on the lower portion of the sacrificial layer to cover the conductive pattern.