| 发明名称 | Equal gate height control method for semiconductor device with different pattern densites | ||
| 摘要 | A method of forming a semiconductor integrated circuit (IC) includes forming a first semiconductor layer over a substrate, the first semiconductor layer having an uneven upper surface, forming a stop layer over the first semiconductor layer, the first semiconductor layer disposed between the substrate and the stop layer, and treating the stop layer to change its etch selectivity relative to the first semiconductor layer. | ||
| 申请公布号 | US9412666(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201514938372 | 申请日期 | 2015.11.11 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chen Chao-Cheng;Huang Ming-Jie;Lin Yu Chao |
| 分类号 | H01L21/302;H01L21/461;H01L21/8234;H01L21/3115;H01L21/28;H01L21/321;H01L29/66 | 主分类号 | H01L21/302 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method of forming a semiconductor integrated circuit (IC), the method comprising: forming a first semiconductor layer over a substrate, the first semiconductor layer having an uneven upper surface; forming a stop layer over the first semiconductor layer, the first semiconductor layer disposed between the substrate and the stop layer; and treating the stop layer to change its etch selectivity relative to the first semiconductor layer, thereby forming a treated stop layer. | ||
| 地址 | Hsin-Chu TW | ||