发明名称 Integrated circuit assembly and method of making
摘要 A first wafer is provided that includes an insulating layer, a first active layer, and a handle layer. The insulating layer has a first surface and a second surface. The first active layer contacts the first surface of the insulating layer. The handle layer contacts the second surface of the insulating layer. A second wafer is provided that includes a substrate and a second active layer. The substrate has a first surface and a second surface. The second active layer contacts the first surface of the substrate. The second wafer is bonded to the first wafer by physically connecting the first active layer to the second surface of the substrate. The handle layer is removed. A metal bond pad is formed on the second surface of the insulating layer. The metal bond pad is electrically connected to the first active layer.
申请公布号 US9412644(B2) 申请公布日期 2016.08.09
申请号 US201414572580 申请日期 2014.12.16
申请人 Qualcomm Incorporated 发明人 Stuber Michael A.;Molin Stuart B.;Drucker Mark;Fowler Peter
分类号 H01L21/30;H01L21/762;H01L21/84 主分类号 H01L21/30
代理机构 Haynes and Boone, LLC 代理人 Haynes and Boone, LLC
主权项 1. A method comprising: providing a first wafer including: an insulating layer having a first surface and a second surface;a first active layer contacting the first surface of the insulating layer;a handle layer contacting the second surface of the insulating layer; providing a second wafer including: a substrate having a first surface and a second surface;a second active layer contacting the first surface of the substrate; bonding the second wafer to the first wafer by physically connecting the first active layer to the second surface of the substrate; removing the handle layer; and forming a metal bond pad on the second surface of the insulating layer; wherein the metal bond pad is electrically connected to the first active layer.
地址 San Diego CA US