Thin-film transistor and process for manufacture of the thin-film transistor

摘要

A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

主权项

1. A thin-film transistor, comprising:
an oxidic semiconductor channel; metallic or oxidic gate, drain and source contacts; and multiple barrier layers positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts; wherein one of the barrier layers is formed from a subtractively structured conductive layer in direct contact with the oxidic semiconductor channel; and wherein another of the barrier layers is formed of an electrical insulator comprising silicon oxide or silicon nitride.