LIGHT EMITTING DIODE

摘要

Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a blocking layer and an extension layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The blocking layer is between the eutectic layer and the semiconductor epitaxial structure. The blocking layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The extension layer is between the eutectic layer and the semiconductor epitaxial structure. The extension layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

主权项

1. A light emitting diode, mounted on a carrier substrate and comprising:
a semiconductor epitaxial structure; and at least one electrode pad structure, wherein the semiconductor epitaxial structure is electrically connected to the carrier substrate through the at least one electrode pad structure, and the at least one electrode pad structure comprises:
a eutectic layer, adapted for eutectic bonding to the carrier substrate;a blocking layer, disposed between the eutectic layer and the semiconductor epitaxial structure; andan extension layer, disposed between the blocking layer and the semiconductor epitaxial structure.