METHOD OF FORMING RESIST PATTERN AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress deviation of a line width from its design size by selectively silylizing the surface layer of the resist resin in an exposed region by selectively exposing the resist film in a wide area of the exposed region with a lower irradiation dose than in a narrow area of the exposed region. SOLUTION: A resist film 12 is exposed with an ArF exposure apparatus using a slit-shaded mask for a wide exposed area C, a fused quartz for a narrow exposed area D, and a Cr masking material 13 for a non-exposed area. The light transmittance for the wide exposed area C is adjusted to be about 70%. The wide exposed area C and the narrow exposed area are irradiated with a same light intensity. After the whole surface is irradiated with an ultraviolet light, a silylized layer is formed with a vapor-phase process by applying DMSDMA(dimethylsilyl-dimethylamine) as a silylizing reagent to the surface of the exposed region E. As a result, almost the same film thickness is obtained in the two exposed areas C and D.