| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor and its manufacturing method. <P>SOLUTION: In the thin film transistor and its manufacturing method, the thin film transistor includes a structure wherein a gate electrode, a gate insulating film and a channel film are laminated. A source line which is positioned so as to contact to the channel film, extended in the direction crossing the gate electrode, and both ends of which are arranged in one edge of the gate electrode positioned in the lower part, is provided. A drain line is so arranged as to be positioned so as to contact to the channel film, separated from the source line by the length of the channel, and to have a shape symmetrically to the source line. In the thin film transistor, an overlap area of a line between the gate, and the source line and the drain is narrow and cut-off frequency is high. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
