发明名称 METHOD FOR FORMING A LAYER AND METHOD FOR MANUFACTURING A CAPACITOR OF A SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>The present invention can provide methods of forming a layer including lanthanum by utilizing a lanthanum precursor existing in a liquid phase at a room temperature. The present invention can further provide methods of forming layers including lanthanum on objects and methods of manufacturing a capacitor.</p>
申请公布号 KR100589040(B1) 申请公布日期 2006.06.14
申请号 KR20040061646 申请日期 2004.08.05
申请人 发明人
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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