| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory cell programming method for reducing a coupling effect. <P>SOLUTION: In the memory cell programming method, n bits data are programmed in a memory cell having a plurality of critical voltage distributions. The method includes sequentially executed first to n-th programming steps. In the first to n-th programming steps, first to n-th bits are programmed by using the plurality of critical voltage distributions. A critical voltage difference between critical voltage distributions used in the n-th programming step is smaller than at least one of critical voltage differences between critical voltage distributions used in remaining programming steps. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
