MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MAKING SAME

摘要

A MEMS infrared sensor and a manufacturing method thereof are provided to improve a characteristic of the sensor by increasing an area of a senor unit by reducing the area occupied by a support arm. A sacrificial layer is formed on a substrate(10) including a reflective film. A step(12) for a support arm structure of the three-dimensional structure is formed. An anchor(13) is patterned in a lower part of the step. A lower protective film(14) is deposited in the front side of the sacrificial layer. A contact hole(15) is formed in the lower protective film. An electrode(16) is formed on the lower protective film of the support arm structure. A sensor material(17) is deposited in the front side of the sacrificial layer. An upper protective film(18) is deposited in the front side of the sacrificial layer. A path(19) of the etchant material is formed by patterning the upper protective film.