SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a high reliability.SOLUTION: A transistor has: a first insulating layer; a first conductive layer provided on the first insulating layer; a second insulating layer provided on the first insulating layer and the first conductive layer; a third insulating layer provided on the second insulating layer; an oxide semiconductor layer provided on the third insulating layer; a second conductive layer and a third conductive layer provided on the third insulating layer and the oxide semiconductor layer; a fourth insulating layer provided on the third insulating layer, the second conductive layer, the oxide semiconductor layer and the third conductive layer; and a fifth insulating layer provided on the second insulating layer and the fourth insulating layer. A capacitive element has an oxide conductive layer, a fifth insulating layer, and a fourth conductive layer provided on the fifth insulating layer. The oxide conductive layer contains the same metal elements as the oxide semiconductor layer. The oxide conductive layer has a hydrogen concentration higher than that of the oxide semiconductor layer. The fifth insulating layer is provided so as to cover the third insulating layer and an end of the fourth insulating layer. The fifth insulating layer is contacted with the second insulating layer. The fifth insulating layer has a high coatability.SELECTED DRAWING: Figure 1