发明名称 |
Silicon carbide substrate, semiconductor device, and methods for manufacturing them |
摘要 |
A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided. |
申请公布号 |
US9437690(B2) |
申请公布日期 |
2016.09.06 |
申请号 |
US201514870777 |
申请日期 |
2015.09.30 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Ishibashi Keiji |
分类号 |
H01L29/32;H01L21/02;C30B29/36;C30B31/04;H01L29/16;H01L29/66;H01L29/812;H01L29/04;H01L29/36 |
主分类号 |
H01L29/32 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. A silicon carbide substrate, comprising:
a first main surface; and a second main surface opposite to said first main surface, a region including at least one main surface of said first and second main surfaces consisting essentially of single-crystal silicon carbide, sulfur atoms being present in said one main surface at not less than 80×1010 atoms/cm2 and not more than 800×1010 atoms/cm2, and carbon atoms as an impurity being present in said one main surface at not less than 3 atomic percent (at %) and not more than 25 atomic percent (at %). |
地址 |
Osaka-shi, Osaka JP |