Method of making a semiconductor device having a functional capping

摘要

A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.

主权项

1. A wafer level method of making a micro-electronic and/or micro-mechanical device, having a capping structure with electrical wafer through via connections, comprising the steps of:
providing a first wafer of a semiconductor material having a first side and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the first wafer on the second side, said barrier structure comprising an inner layer of an insulating material and an outer layer of another material; applying metal in said holes so as to cover the walls in the holes and the bottom of the holes; removing the barrier structure and providing contacts to the first wafer through connections on the second side of the first wafer; providing bonding structures on either of said first side or the second side of the first wafer; bonding the first wafer to a second wafer carrying electronic and microelectronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer; and singulating the bonded first and second wafers to individual devices; wherein the first wafer is a semiconductor wafer, and wherein the barrier structure comprises an oxide layer on the second side of the first wafer, and a resist layer covering the first wafer.