ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE IN A SEMICONDUCTOR DEVICE

摘要

An electrostatic discharge protection structure includes a laterally diffused metal oxide semiconductor (LDMOS) device. The LDMOS device includes an embedded bipolar junction transistor. A gate, a source, a buried layer lead-out area, and a substrate lead-out area of the LDMOS device are grounded. A drain and a body region lead-out area of the LDMOS device are electrically connected to a pad input/output terminal. In an embodiment, the embedded bipolar junction transistor includes a PNP transistor operative to transmit a reverse electrostatic discharge current. An N+ drain, a gate, an N+ source, and a P+ substrate lead-out area form a grounded-gate NMOS (GGNMOS) operative to transmit a forward electrostatic discharge current.

主权项

1. An electrostatic discharge protection structure comprising:
a laterally diffused metal oxide semiconductor (LDMOS) device, the LDMOS device comprising an embedded bipolar junction transistor, wherein a gate, a source, a buried layer lead-out area, and a substrate lead-out area of the LDMOS device are grounded, and a drain and a body region lead-out area of the LDMOS device are electrically connected to a pad input/output terminal.