发明名称 |
Avoiding abnormal capacitor formation by an offline edge-bead rinsing (EBR) |
摘要 |
A method for ensuring no capacitor peeling at the edge of a wafer in the fabrication of dynamic random access memory (DRAM) is disclosed. The method includes first providing a semiconductor substrate having a semiconductor structure formed thereon. A dielectric layer is then formed overlying the semiconductor structure, and patterned for defining a contact window. Followed by, the deposition of a silicon layer over the dielectric layer that fills up the contact window. Consequentially, a photoresist layer is coated overlying the silicon layer, where it will be rinsed twice by a combination of an online EBR (and/or a WEE) and an offline EBR at a distance inwardly away from the edge of the wafer in process for removing a portion of the photoresist to avoid abnormal capacitor formation in later stages. Then, a photolithography process is carried out against the photoresist layer to form a photoresist mask. Finally, the silicon layer is etched where it is not covered by the photoresist mask to form a lower capacitor electrode. The photoresist mask is stripped as to conclude the present invention.
|
申请公布号 |
US6150215(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19990371415 |
申请日期 |
1999.08.10 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIN, KUO-CHI;HSIA, DA-WEN |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|