| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a storage device which can restrain generation of dispersion in resistance value of a storage element constituting a memory cell, and can stably record information and read the recorded information. <P>SOLUTION: A storage layer 2 constituted of an oxide of a rare earth element is arranged between two electrodes. A storage element provided with a layer 3 comprising any metallic element selected from Cu, Ag, Zn is provided in contact with the storage layer 2. A conductive path 31 comprising metallic elements (Cu, Ag, Zn) is formed in a local region inside the storage layer 2 of the storage element by applying a voltage between two electrodes, thus constituting a storage device wherein the crystallographic structure of the conductive path 31 is amorphous. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
