SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, OR DISPLAY DEVICE HAVING THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress variation in electric characteristics and improve the reliability, in a transistor having an oxide semiconductor film.SOLUTION: Provided is a semiconductor device having a transistor. The transistor has: a first gate electrode; a first insulating film on the first gate electrode; a first oxide semiconductor film on the first insulating film; a source electrode electrically connected with the first oxide semiconductor film; a drain electrode electrically connected with the first oxide semiconductor film; a second insulating film on the first oxide semiconductor film; a second oxide semiconductor film that functions as a second gate electrode on the second insulating film; and a third insulating film on the second oxide semiconductor film. The second insulating film has an excess oxygen region, and the excess oxygen region has a concentration gradient.SELECTED DRAWING: Figure 1