发明名称 |
Plasma process method and apparatus |
摘要 |
Plasma processing gas is introduced into an upper portion of a processing vessel and a film-formation gas is simultaneously introduced into the vicinity of a substrate to be processed. The plasma processing gas is ionized to form a first plasma and any of the plasma processing gas that has temporarily recombined in locations close to the substrate to be processed is re-ionized as a second plasma. As a result, the density of etchant ions used for cutting away overhangs around the openings of grooves can be increased. In other words, the number of etchant ions can be increased. This makes it possible to reduce the bias voltage applied to the substrate to be processed, preventing damage thereto.
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申请公布号 |
US5851600(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19970953624 |
申请日期 |
1997.10.17 |
申请人 |
TOKYO ELECTRON, LTD. |
发明人 |
HORIIKE, YASUHIRO;KOBAYASHI, YASUO |
分类号 |
H05H1/46;C23C16/50;C23C16/509;H01J37/32;H01L21/31;(IPC1-7):B05D3/04 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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