发明名称 SOI VOLTAGE-TOLERANT BODY-COUPLED PASS TRANSISTOR
摘要 A method and device for A pass transistor device which includes a source; a drain opposite the source, a body between the source and the drain, and a circuit control network connected between the drain and the source, wherein the circuit control network controls a potential voltage of the body and provides overvoltage protection to the pass transistor.
申请公布号 US2001043112(A1) 申请公布日期 2001.11.22
申请号 US19990398840 申请日期 1999.09.17
申请人 VOLDMAN STEVEN H 发明人 VOLDMAN STEVEN H
分类号 H01L27/12;H01L29/786;(IPC1-7):H01L27/01 主分类号 H01L27/12
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