THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor substrate and a method of manufacturing the same are provided to improve the aperture ratio and transmittance by reducing a CD(Critical Dimension) error. A gate line(30) and a data line(40) are formed at both sides of a gate insulating layer(35). A thin film transistor(50) is formed at an intersection between the gate line and the data line. A pixel electrode(80) is connected to the thin film transistor. An active barrier layer(20) is formed at the gate line and a lower side of a gate electrode of the thin film transistor to reduce a CD error. The thickness of the active barrier layer is 200 to 1000 angstrom. A width of an upper surface of the active barrier layer is equal to a width of a lower surface of the gate line.