发明名称 Low insertion delay clock doubler and integrated circuit clock distribution system using same
摘要 A clock doubler includes a first NAND gate having a first input for receiving a clock input signal and a second input, a second NAND gate having a first input and a second input for receiving a complement of the clock input signal, an output NAND gate having a first and second inputs coupled to outputs of the first and second NAND gates, respectively, and an output for providing a clock output signal, an inverter chain having an input for receiving the clock input signal and responsive to first and second control signals to selectively provide a first true output to the first input of the second NAND gate, and a second complementary output to the second input of the first NAND gate, and a control signal generation circuit providing the first and second control signals in response to the outputs of the first and second NAND gates.
申请公布号 US9372499(B2) 申请公布日期 2016.06.21
申请号 US201414159967 申请日期 2014.01.21
申请人 Advanced Micro Devices, Inc. 发明人 Sambamurthy Sriram;Iyer Arun Sundaresan;Baluni Alok;Grenat Aaron
分类号 H03B19/00;G06F1/04;H03K19/20;H03K5/00;H03K19/00 主分类号 H03B19/00
代理机构 Polansky & Associates P.L.L.C. 代理人 Polansky & Associates P.L.L.C. ;Polansky Paul J.
主权项 1. A clock doubler comprising: a first NAND gate having a first input for receiving a clock input signal, a second input, and an output; a second NAND gate having a first input, a second input for receiving a complement of said clock input signal, and an output, wherein the clock doubler provides a clock output signal in response to the outputs of said first and second NAND gates; an inverter chain having an input for receiving said clock input signal and responsive to first and second control signals to selectively provide a first true output to said first input of said second NAND gate, and a second complementary output to said second input of said first NAND gate; and a control signal generation circuit for providing said first and second control signals in response to said outputs of said first and second NAND gates.
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