| 摘要 |
A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R<SUP>1</SUP>Si(OR<SUP>2</SUP>)<SUB>3</SUB>, (2): Si(OR<SUP>3</SUP>)<SUB>4</SUB>, (3): (R<SUP>4</SUP>)<SUB>2</SUB>Si(OR<SUP>5</SUP>)<SUB>2</SUB>, and (4): R<SUP>6</SUP><SUB>b</SUB>(R<SUP>7</SUP>O)<SUB>3-b</SUB>Si-(R<SUP>10</SUP>)<SUB>d</SUB>-Si(OR<SUP>8</SUP>)<SUB>3-c</SUB>R<SUP>9</SUP><SUB>c</SUB>.
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