| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of well pickup structure of nonvolatile memory. SOLUTION: There is provided a substrate having a first conductive type well, a device separation structure, and a dummy memory sequence. Each of a dummy memory sequence is provided with a second conductive type source region and a second conductive type drain region. On the substrate, a first interlayer insulating layer is formed having an opening which exposes the two adjoining second conductive type drain regions and the device separation structure between the two adjoining second conductive type drain regions. After removing a part of device separation structure exposed by opening, a first conductive type well extension dope region is formed in the substrate exposed by the opening. A well pickup conductive layer is formed in the opening. On the substrate, a dummy bit line is formed, thus connecting electrically the well pickup conductive layer. COPYRIGHT: (C)2008,JPO&INPIT
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