| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which contact resistance can be reduced, and to provide its fabrication process. SOLUTION: The n-type source-drain region 8 in an NMIS region 130 contains n-type impurities at a relatively high concentration and it is connected with silicide 26. The SiGe<SB>x</SB>region 24 in a PMIS region 140 contains p-type impurities at a relatively high concentration, and it is connected with the silicide 26. Barrier height of the silicide 26 formed in the NMIS region 130 and n-type silicon is lower than the barrier height of Ni silicide and the n-type silicon. COPYRIGHT: (C)2008,JPO&INPIT
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