发明名称 EFFICIENT TRANSISTOR STRUCTURE
摘要 An integrated circuit comprises a first source, a first drain, a second source, a first gate arranged between the first source and the first drain, and a second gate arranged between the first drain and the second source. The first and second gates define alternating first and second regions in the drain. The first and second gates are arranged farther apart in the first regions than in the second regions.
申请公布号 EP2030237(A2) 申请公布日期 2009.03.04
申请号 EP20070809055 申请日期 2007.05.08
申请人 MARVELL WORLD TRADE LTD. 发明人 SUTARDJA, SEHAT
分类号 H01L27/02 主分类号 H01L27/02
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