Photovoltaic perovskite material and method of fabrication

摘要

A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI2) film and methylammonium halide (CH3NH3X) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbI2 layer onto an ITO-covered glass; spinning an MAI layer onto the PbI2 layer; annealing the PbI2 layer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.

主权项

1. A semiconductor device, comprising:
a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead(H) iodide (PbI2) film and methylammonium halide (CH3NH3X) film, wherein the perovskite layer includes a graded composition with increased Pb and I toward one of the cathode layer or anode layer, wherein X includes at least one of Cl, Br, or I.