| 摘要 |
PURPOSE:To satisfactorily reduce ohmic-contact of an electrode when a ZnTe layer is used as an electrode contact layer. CONSTITUTION:Relating to manufacture of II-VI group semiconductor element wherein a 11-VI group semiconductor layer and, over it, an electrode contact layer are epitaxial-grown, by ZnTe, on a substrate 1, the position of an impurities supply source 11 for introducing impurities at, at least, epitaxial growth an its surface layer is, in the process of epitaxial growth of an electrode contact layer, shifted toward substrate 1 side from the position of impurity supply source 11 at previous epitaxial growth, for epitaxial growth. |
