HIGH-VOLTAGE LDMOS TRANSISTOR DEVICE

摘要

It is possible for electrical breakdown to occur at a lower voltage in the case of a strong current in a lateral DMOST having a conventional interdigitated source/drain configuration as compared with lower current values. The invention is based on the recognition that this breakdown arises at the end faces of the drain fingers owing to current convergence at the ends of the fingers and the Kirk effect associated therewith. To increase the SOAR (safe operating area) of the transistor, the tips 11 of the drain fingers 7 are rendered inactive in that the source fingers 6 are locally interrupted. In an optimized embodiment, the source fingers are shorter than the drain fingers at the ends of these drain fingers.