发明名称 INTERPENETRATING NETWORK FOR CHEMICAL-MECHANICAL POLISHING
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing pad achieving more effective slurry flow patterns for achieving a large actual contact area with a workpiece and removing polishing waste, reducing the need of re-forming texture, providing a necessary rigidity structure for favorable planarization efficiency, and providing a large void capacity in a polishing layer adjoining a polishing surface. <P>SOLUTION: The polishing pad has the polishing layer 202 including an interpenetrating network including a non-fugitive phase 205 that is continuous and a fugitive phase 205 that is substantially co-continuous. The non-fugitive phase forms a three-dimensional network including a plurality of mutually connected polishing elements that define a mesh-like gap section, and the fugitive phase which is substantially co-continuous is disposed in the mesh-like gap section. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009056585(A) 申请公布日期 2009.03.19
申请号 JP20080209139 申请日期 2008.08.15
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 MULDOWNEY GREGORY P
分类号 B24B37/00;B24D99/00;H01L21/304 主分类号 B24B37/00
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