发明名称 |
Method for pore sealing of porous materials using polyimide langmuir-blodgett film |
摘要 |
Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores. |
申请公布号 |
US9492841(B2) |
申请公布日期 |
2016.11.15 |
申请号 |
US201313847457 |
申请日期 |
2013.03.19 |
申请人 |
IMEC;St. Petersburg Electrotechnical University |
发明人 |
Luchinin Victor;Goloudina Svetlana;Pasyuta Vyacheslav;Ivanov Alexey;Baklanov Mikhail;Krishtab Mikhail |
分类号 |
B05D1/20;B32B37/15;B32B18/00;B32B27/04;B32B27/28;H05K1/03;H01L21/02;H05K3/14;C09D179/08;C08G73/10 |
主分类号 |
B05D1/20 |
代理机构 |
McDonnell Boehnen Hulbert & Berghoff LLP |
代理人 |
McDonnell Boehnen Hulbert & Berghoff LLP |
主权项 |
1. A method for pore sealing a porous substrate, comprising:
(a) forming a continuous monolayer of a polyimide precursor on a liquid surface; and (b) transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, wherein the porous substrate is an ultra-low κ dielectric material having a dielectric constant κ lower than 2.3 and the porous substrate has a pore size of 1 to 5 nm; and further comprising: (c) imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. |
地址 |
Leuven BE |