| 发明名称 | Vertical gate-all-around field effect transistors and methods of forming same | ||
| 摘要 | Semiconductor devices and methods of forming the same are provided. A template layer is formed on a substrate, the template layer having a recess therein. A plurality of nanowires is formed in the recess. A gate stack is formed over the substrate, the gate stack surrounding the plurality of nanowires. | ||
| 申请公布号 | US9520466(B2) | 申请公布日期 | 2016.12.13 |
| 申请号 | US201514659262 | 申请日期 | 2015.03.16 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Holland Martin Christopher;Duriez Blandine;van Dal Mark |
| 分类号 | H01L21/02;H01L29/06;H01L27/088;H01L21/8234;H01L29/66;H01L29/78;H01L29/20;H01L29/423;H01L21/8252 | 主分类号 | H01L21/02 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method of forming a semiconductor device, the method comprising: forming a template layer on a substrate, the template layer having a first recess therein; forming a plurality of first nanowires in the first recess; and forming a first gate stack, the first gate stack surrounding the plurality of first nanowires. | ||
| 地址 | Hsin-Chu TW | ||