Semiconductor device and method of manufacturing the same

摘要

According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface, and having a LSI on the first surface of the semiconductor substrate, a first insulating layer with an opening, the first insulating layer provided on the first surface of the semiconductor substrate, a conductive layer on the opening, the conductive layer being connected to the LSI, and a via extending from a second surface of the semiconductor substrate to the conductive layer through the opening, the via having a size larger than a size of the opening in a range from the second surface to a first interface between the semiconductor substrate and the first insulating layer, and having a size equal to the size of the opening in the opening.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an insulating layer with an opening on a first surface of a semiconductor substrate; forming a semiconductor integrated circuit on the first surface of the semiconductor substrate; forming a conductive layer on the opening, the conductive layer being connected to the semiconductor integrated circuit; forming a hole extending from a second surface of the semiconductor substrate to the conductive layer through the opening by selectively etching the semiconductor substrate from the second surface of the semiconductor substrate, the hole having a size larger than a size of the opening in a range from the second surface to an interface between the semiconductor substrate and the insulating layer, and having a size equal to the size of the opening in the opening; forming a via in the hole; and selectively removing a part of the conductive layer after forming the hole, wherein the conductive layer comprises a first layer on the insulating layer and a second layer on the first layer, the part of the conductive layer is the first layer, and a size of the conductive layer is smaller than the size of the hole.