Modified reset state for enhanced read margin of phase change memory

摘要

Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.

主权项

1. A method, comprising:
applying a first electrical signal to a memory cell for programming the memory cell to a resistance state; comparing a current value of a test signal applied to the memory cell to a threshold current value; determining a fall time associated with a second electrical signal based at least in part on the comparing; and applying the second electrical signal to the memory cell for programming the memory cell to an increased resistance state, wherein the second electrical signal comprises an added trailing edge time relative to the first electrical signal based at least in part on the determining, and wherein the fall time of the second electrical signal is greater than a rise time of the second electrical signal.