| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite wafer formed by transferring a thin film of an oxide single crystal which is lithium tantalite or lithium niobate over the entire surface of a supporting wafer, with which cracks or peelings are hardly generated at a bonding interface between the supporting wafer and the oxide single crystal thin film.SOLUTION: The manufacturing method of a composite wafer includes at least: a step of forming an ion injection layer inside an oxide single crystal wafer by injecting hydrogen atomic ions or hydrogen molecular ions from a surface; a step of applying a surface activation treatment on at least one of a surface of the oxide single crystal wafer into which ions are injected or a surface of a supporting wafer; a step of obtaining a bonded body by bonding the surface of the oxide single crystal wafer into which ions are injected and the surface of the supporting wafer; a step of applying a heat treatment to the bonded body at a temperature higher than or equal to 90°C, at which a crack is not generated; and a step of irradiating the heat-treated bonded body with visible light, which is a step of obtaining an oxide single crystal thin film, peeled off along the ion injection layer and transferred onto the supporting wafer.SELECTED DRAWING: Figure 1 |
