发明名称 Reducing input capacitance for high speed integrated circuits
摘要 An integrated circuit with reduced pad capacitance, having a trench formed in the silicon substrate below the pad to reduce the pad capacitance. In another embodiment, an encapsulated air cavity if formed underneath the pad. Other embodiments are described and claimed.
申请公布号 US2008316662(A1) 申请公布日期 2008.12.25
申请号 US20070821005 申请日期 2007.06.21
申请人 ZENG XIANG YIN;CUI MING DONG;CHRISTENSEN GREGORY V;ABDULLA MOSTAFA NAGUIB;LU DAOQIANG;HE JIANGQI;TANG JIAMIAO 发明人 ZENG XIANG YIN;CUI MING DONG;CHRISTENSEN GREGORY V.;ABDULLA MOSTAFA NAGUIB;LU DAOQIANG;HE JIANGQI;TANG JIAMIAO
分类号 H02H9/00 主分类号 H02H9/00
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