发明名称 |
Method of forming dual gate dielectric layer |
摘要 |
A semiconductor device includes a dual gate dielectric layer that increases a performance of a semiconductor device. The semiconductor device includes a first dielectric layer having a predetermined thickness on a semiconductor substrate. The first dielectric layer is formed on a first region. The semiconductor device also includes a second dielectric layer having a dielectric constant higher than that of the first dielectric layer. The second dielectric layer is formed on both the first region and a second region.
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申请公布号 |
US7439604(B2) |
申请公布日期 |
2008.10.21 |
申请号 |
US20060616836 |
申请日期 |
2006.12.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO MIN-HEE;KIM JI-YOUNG |
分类号 |
H01L21/336;H01L29/00;H01L21/76;H01L21/762;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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