发明名称 Pulse generation circuit
摘要 Pulse generation circuit has a P-MOS transistor having a drain electrode connected to a first power source; a first N-MOS transistor having a drain electrode connected to the source electrode of the P-MOS transistor; a second N-MOS transistor having a drain electrode connected to the source electrode of the first N-MOS transistor, a gate electrode receiving an input pulse signal, and a source electrode connected to the second power source; a delay circuit having an input terminal connected to the source electrode of the P-MOS transistor and the drain electrode of the first N-MOS transistor and an output terminal connected to gate electrode of the P-MOS transistor and gate electrode of the first N-MOS transistor; an inverter input connected to the source electrode of the P-MOS transistor and the drain electrode of the second N-MOS transistor for outputting a generated pulse; and a keeper keeping voltage level to the inverter.
申请公布号 US7446589(B2) 申请公布日期 2008.11.04
申请号 US20050319729 申请日期 2005.12.29
申请人 FUJITSU LIMITED 发明人 IJITSU KENJI
分类号 G05F1/04;G06F1/08;G06F1/10;H03K3/00;H03K5/04;H03K5/06;H03K5/13 主分类号 G05F1/04
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